Initial studies of anti-ferroelectric materials at the University of Portsmouth and Iowa State University indicate that these polar dielectrics can store digital information. The experimental results are very encouraging. A novel anti-ferroelectric random access memory chip (AFRAM) that will compete with traditional ferroelectric random access memory (FRAM) to deliver twice the memory storage capacity in the same volume, has been put forward. A US / EU patent on this technology has been granted: Anti-ferroelectric capacitor memory cell, Grant US-11355504-B2.
